Shipping Nvidia’s H20 chips to China was “great” for Beijing and Washington and not a security threat, the tech giant’s chief said Friday.This article is brought to you by this site.
Researchers have long been searching for alternatives to lead-based perovskites for use in electronic devices due to concerns about toxicity and performance limitations. Tin-based perovskites offer a promising solution, but they also present their own […]
Researchers have demonstrated a new technique for precisely controlling phase boundaries in thin film materials by manipulating the thickness of those films—allowing them to engineer energy storage materials that do not rely on toxic elements. […]
A team of materials scientists at Rice University has developed a new way to grow ultrathin semiconductors directly onto electronic components.This article is brought to you by this site.
Numerous market analyses have shown that over the next five years, demand for lithium-ion batteries for everything from personal electric devices to grid-scale energy storage is expected to grow dramatically.This article is brought to you […]
Silicon semiconductors used in existing photodetectors have low light responsivity, and the two-dimensional semiconductor MoS₂ (molybdenum disulfide) is so thin that doping processes to control its electrical properties are difficult, limiting the realization of high-performance […]
A new ultra-thin, transparent film, developed by researchers at UNIST can generate electrical signals solely through mechanical peeling or pressing actions. This technology paves the way for smart sensors that operate without batteries, with potential […]
QUT researchers have identified a new method for incorporating copper ions into a germanium telluride thermoelectric material that significantly improves its ability to convert waste heat into electricity.This article is brought to you by this […]
Advances in technology have led to the miniaturization of many mechanical, electronic, chemical and biomedical products, and with that, an evolution in the way these tiny components and parts are transported is necessary to follow. […]
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are a type of field-effect transistors (FETs) designed to operate at very high frequencies with low noise. As such, they have been widely applied in high-power and […]
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