Tin-halide perovskites, a class of tin-based materials with a characteristic crystal structure that resembles that of the compound calcium titanate, could be promising alternatives to commonly used semiconductors. Past studies have explored the possibility of using these materials to fabricate p-channel thin-film transistors (TFTs), devices used to control and amplify the flow of charge carriers in electronics devices.
A new strategy to fabricate highly performing thin-film tin perovskite transistors
