In 2021, a team led by MIT physicists reported creating a new ultrathin ferroelectric material, or one where positive and negative charges separate into different layers. At the time, they noted the material’s potential for applications in computer memory and much more. Now the same core team and colleagues—including two from the lab next door—have built a transistor with that material and shown that its properties are so useful that it could change the world of electronics.
New transistor’s superlative properties could have broad electronics applications
