Novel formamidinium lead iodide perovskite n-type transistors have notable field-effect mobilities

Metal halide perovskites, a class of crystalline materials with remarkable optoelectronic properties, have proven to be promising candidates for the development of cost-effective thin-film transistors. Recent studies have successfully used these materials, particularly tin (Sn) halide perovskites, to fabricate p-type transistors with field-effect hole mobilities (μh) of over 70 cm2 V−1 s−1.

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