Unraveling auger recombination in bipolar devices under high carrier injection

High-voltage and high-power devices are critical for more efficient and sustainable high-power operations. One candidate for such next-generation devices is bipolar silicon carbide (SiC). SiC devices have already found commercial applications, with SiC semiconductor field effect transistors and Schottky barrier diodes outperforming their silicon alternatives due to lower on-resistance and higher breakdown voltage. However, current industrial standard SiC devices are unipolar—they conduct electricity using only electrons.

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